Berry curvature mediated valley Hall and charge Hall effects in graphene via strain engineering

Abstract

We point out a practical way to induce a finite charge Hall conductivity in graphene via an off-diagonal strain. Our conclusions are based on a general analysis and supported by numerical examples. The interplay between a substrate-induced gap and the strain is discussed. We show that the substrate-induced gap itself does not break the symmetry that maps one valley onto the other, and hence does not yield a net charge Hall effect. The net charge Hall conductivity is found to be sizable and should be observable in the presence of both the gap and the strain. The sign of the Hall conductivity can be tuned by varying the strain parameters. The valley Hall conductivity is studied as well. The valley and the orbital magnetic moment accumulations on the sample edges may be detected in a Hall conductivity experiment.

22 pages, 5 figures, accepted by Phys. Rev. B

References in corpus (18)

• Electric Field Effect in Atomically Thin Carbon Films
• The electronic properties of graphene
• Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics
• Substrate-induced band gap opening in epitaxial graphene
• Uniaxial Strain in Graphene by Raman Spectroscopy: G peak splitting, Gruneisen Parameters and Sample Orientation
• Valley filter and valley valve in graphene
• A tight-binding approach to uniaxial strain in graphene
• A Graphene Field-Effect Device
• All-graphene integrated circuits via strain engineering
• Quantum Anomalous Hall Effect in Graphene from Rashba and Exchange Effects
• Graphene valley filter using a line defect
• Spontaneous Quantum Hall States in Chirally-stacked Few-Layer Graphene Systems
• Quantum Anomalous Hall Effect in Single-layer and Bilayer Graphene
• Charge inhomogeneities due to smooth ripples in graphene sheets
• Topological Berry phase and semiclassical quantization of cyclotron orbits for two dimensional electrons in coupled band models
• Valley filter in strain engineered graphene
• Gaps tunable by electrostatic gates in strained graphene
• Berry phase mediated topological thermoelectric transport in gapped single and bilayer graphene

Cited by in corpus (4)

• Electrical Tuning of Valley Magnetic Moment via Symmetry Control
• Thermally driven pure spin and valley current via anomalous Nernst effect in monolayer group-VI dichalcogenides
• Topological electric current from time-dependent elastic deformations in graphene
• Photo-induced valley currents in strained graphene