Single layer graphene with electronic properties as gated bilayer
arXiv:1906.10160 · doi:10.1103/PhysRevB.100.035436
Abstract
We demonstrate that single layer graphene exhibits the electronic structure of a bilayer when it is connected to two gated bilayers. The energy gap characteristic for gated bilayer is induced in the single layer and it persists for distances separating the bilayers up to 20 nm. Most importantly, we report on the appearance of topologically protected gapless state localized in a single graphene layer when the distant bilayers differ in the stacking order. The one-dimensional current in the topological state flows in a single layer graphene, and this finding suggests a new exploitation of graphene in nanoelectronics.
References in corpus (23)
- Magic-angle graphene superlattices: a new platform for unconventional superconductivity
- Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
- Gate-induced insulating state in bilayer graphene devices
- Strain Solitons and Topological Defects in Bilayer Graphene
- Topological confinement in bilayer graphene
- Valley Chern Numbers and Boundary Modes in Gapped Bilayer Graphene
- Strong Suppression of Electrical Noise in Bilayer Graphene Nano Devices
- Giant edge state splitting at atomically precise zigzag edges
- Gate-controlled topological conducting channels in bilayer graphene
- Controlling Energy Gap of Bilayer Graphene by Strain
- Evidence for a Spin Phase Transition at ν=0 in Bilayer Graphene
- Topological kink states at a tilt boundary in gated multi-layer graphene
- Edge states and flat bands in graphene nanoribbons with arbitrary geometries
- Stacking boundaries and transport in bilayer graphene
- Electrical observation of a tunable band gap in bilayer graphene nanoribbons at room temperature
- Anomalous Exciton-Condensation in Graphene Bilayers
- Van der Waals interaction in magnetic bilayer graphene nanoribbons
- Bilayer graphene dual-gate nanodevice: An ab initio simulation
- Topologically confined states at corrugations of gated bilayer graphene
- Controlling the layer localization of gapless states in bilayer graphene with a gate voltage
- Anomalous Dirac point transport due to extended defects in bilayer graphene
- Ballistic electron channels including weakly protected topological states in delaminated bilayer graphene
- Existence of nontrivial topologically protected states at grain boundaries in bilayer graphene: signatures and electrical switching