Topologically confined states at corrugations of gated bilayer graphene

Abstract

We investigate the electronic and transport properties of gated bilayer graphene with one corrugated layer, which results in a stacking AB/BA boundary. When a gate voltage is applied to one layer, topologically protected gap states appear at the corrugation, which reveal as robust transport channels along the stacking boundary. With increasing size of the corrugation, more localized, quantum-well-like states emerge. These finite-size states are also conductive along the fold, but in contrast to the stacking boundary states, which are gapless, they present a gap. We have also studied periodic corrugations in bilayer graphene; our findings show that such corrugations between AB- and BA-stacked regions behave as conducting channels that can be easily identified by their shape.

References in corpus (17)

• The structure of suspended graphene sheets
• Topological Insulators with Inversion Symmetry
• Gate-induced insulating state in bilayer graphene devices
• Control and Characterization of Individual Grains and Grain Boundaries in Graphene Grown by Chemical Vapor Deposition
• Electronic states and Landau levels in graphene stacks
• Structure and electronic transport in graphene wrinkles
• On the roughness of single- and bi-layer graphene membranes
• Topological confinement in bilayer graphene
• Midgap states and charge inhomogeneities in corrugated graphene
• Valley-Hall Kink and Edge States in Multilayer Graphene
• Evidence for a Spin Phase Transition at ν=0 in Bilayer Graphene
• Energy gaps, magnetism, and electric field effects in bilayer graphene nanoribbons
• Minimum Conductivity and Evidence for Phase Transitions in Ultra-clean Bilayer Graphene
• Electronic transport through bilayer graphene flakes
• Zero-energy states in corrugated bilayer graphene
• Helical States in Curved Bilayer Graphene
• Spin Symmetry of the Bilayer Graphene Groundstate

Cited by in corpus (15)

• Giant oscillations in a triangular network of one-dimensional states in marginally twisted graphene
• Perfect one-dimensional chiral states in biased twisted bilayer graphene
• The emergence of one-dimensional channels in marginal-angle twisted bilayer graphene
• Twistronics in graphene-based van der Waals structures
• Anisotropic Strain Induced Soliton Movement Changes Stacking Order and Bandstructure of Graphene Multilayers
• Controlling the layer localization of gapless states in bilayer graphene with a gate voltage
• Ballistic electron channels including weakly protected topological states in delaminated bilayer graphene
• Electronic transport in graphene with out-of-plane disorder
• Quantum transport across van der Waals domain walls in bilayer graphene
• Existence of nontrivial topologically protected states at grain boundaries in bilayer graphene: signatures and electrical switching
• Engineering topological phases in triple HgTe/CdTe quantum wells
• Topologically protected gap states and resonances in gated trilayer graphene
• Single layer graphene with electronic properties as gated bilayer
• Gapless states and current control in strongly distorted gated trilayer graphene
• Corrugation induced stacking solitons with topologically confined states in gapped bilayer graphene