Control over band structure and tunneling in Bilayer Graphene induced by velocity engineering
arXiv:1311.6557 · doi:10.1088/0953-8984/26/1/015302
Abstract
The band structure and transport properties of massive Dirac Fermions in bilayer graphene with velocity modulation in space are investigated in presence of the previously created band gap. It is pointed out that the velocity engineering is considered as a factor to control the band gap of symmetry-broken bilayer graphene. The band gap is direct and independent of velocity value if velocity modulated in two layers is set up equally. Otherwise, in the case of interlayer asymmetric velocity, not only the band gap is indirect, but also the electron-hole symmetry fails. This band gap is controllable by the ratio of the velocity modulated in the upper layer to the velocity modulated in the lower layer. In more detail, the shift of momentum from the conduction band edge to the valence band edge can be engineered by the gate bias and velocity ratio. A transfer matrix method is also elaborated to calculate four-band coherent conductance through a velocity barrier possibly subjected to a gate bias. Electronic transport depends on the ratio of velocity modulated inside the barrier to the one for surrounding regions. As a result, a quantum version of total internal reflection is observed for enough thick velocity barriers. Moreover, a transport gap originating from the applied gate bias is engineered by modulating velocity of the carriers in the upper and lower layers.
11 pages, 9 figures
References in corpus (23)
- The electronic properties of graphene
- Suspended Graphene: a bridge to the Dirac point
- Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
- Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene
- Gate-induced insulating state in bilayer graphene devices
- Unconventional Integer Quantum Hall effect in graphene
- The electronic properties of bilayer graphene
- Veselago Lens for Electrons: Focusing and Caustics in Graphene p-n Junctions
- Evidence of Klein tunneling in graphene p-n junctions
- Anisotropic behaviors of massless Dirac fermions in graphene under periodic potential
- Fermi velocity engineering in graphene by substrate modification
- Tuning the effective fine structure constant in graphene: opposing effects of dielectric screening on short- and long-range potential scattering
- Ab initio GW many-body effects in graphene
- Many-body interactions in quasi-freestanding graphene
- Engineering artificial graphene in a two-dimensional electron gas
- Controlling Energy Gap of Bilayer Graphene by Strain
- Making Massless Dirac Fermions from Patterned Two-Dimensional Electron Gases
- Graphene: A Pseudochiral Fermi Liquid
- Bilayer graphene with single and multiple electrostatic barriers: band structure and transmission
- Scattering in one-dimensional heterostructures described by the Dirac equation
- Fermi Velocity Enhancement in Monolayer and Bilayer Graphene
- Four band tunneling in bilayer graphene
- Spin polarization and magnetoresistance through a ferromagnetic barrier in bilayer graphene
Cited by in corpus (7)
- Localization of massless Dirac particles via spatial modulations of the Fermi velocity
- Indirect band gap in graphene from modulation of the Fermi velocity
- Tuning the Fano factor of graphene via Fermi velocity modulation
- Perfect valley filter controlled by Fermi velocity modulation in graphene
- Effects of Fermi velocity engineering in magnetic graphene superlattices
- Valley to charge current conversion in graphene grain boundaries
- Effect of asymmetric Fermi velocity on trigonally warped spectrum of bilayer graphene