The effect of a velocity barrier on the ballistic transport of Dirac fermions

Abstract

We propose a novel way to manipulate the transport properties of massless Dirac fermions by using velocity barriers, defining the region in which the Fermi velocity, $v_F$, has a value that differs from the one in the surrounding background. The idea is based on the fact that when waves travel accross different media, there are boundary conditions that must be satisfied, giving rise to Snell's-like laws. We find that the transmission through a velocity barrier is highly anisotropic, and that perfect transmission always occurs at normal incidence. When $v_F$ in the barrier is larger that the velocity outside the barrier, we find that a critical transmission angle exists, a Brewster-like angle for massless Dirac electrons.

4.3 pages, 5 figures

References in corpus (14)

• The electronic properties of graphene
• Universal Dynamic Conductivity and Quantized Visible Opacity of Suspended Graphene
• Chiral tunneling and the Klein paradox in graphene
• Valley filter and valley valve in graphene
• Quantum interference and Klein tunneling in graphene heterojunctions
• Veselago Lens for Electrons: Focusing and Caustics in Graphene p-n Junctions
• Quantum-limited shot noise in graphene
• Anisotropic behaviors of massless Dirac fermions in graphene under periodic potential
• Tuning the effective fine structure constant in graphene: opposing effects of dielectric screening on short- and long-range potential scattering
• Electron Beam Supercollimation in Graphene Superlattices
• Klein Backscattering and Fabry-Perot Interference in Graphene Heterojunctions
• Shot Noise in Ballistic Graphene
• Engineering artificial graphene in a two-dimensional electron gas
• Shot Noise in Graphene

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