activity
20092026
most citedEffects of Strain on Electronic Properties of Graphene

651 citations · 1.3k across the 22 of their papers we have counts for

collaborators

23 papers

cond-mat.mtrl-sci2026

Relativistic Effects in LaBi Thin Films

Reiley Dorrian, Sungmin Song, Jinwoong Kim +4

Chemical substitution in crystalline quantum materials is a powerful way to explore the consequences of strong spin-orbit coupling on their structural and electronic properties. In…

cond-mat.mtrl-sci2023★ 7 cited

Study of vacancy ordering and the boson peak in metastable cubic Ge-Sb-Te using machine learning potentials

Young-Jae Choi, Minjae Ghim, Seung-Hoon Jhi

The mechanism of the vacancy ordering in metastable cubic Ge-Sb-Te (c-GST) that underlies the ultrafast phase-change dynamics and prominent thermoelectric properties remains elusiv…

cond-mat.mtrl-sci2022★ 2 cited

Divergent phonon angular momentum driven by temperature and strain

Young-Jae Choi, Seung-Hoon Jhi

The phonon angular momentum (PAM) may exhibit exotic temperature dependence as it is sensitive to the phonon lifetime. Constant phonon-lifetime approximation fails to depict such b…

cond-mat.str-el2022★ 6 cited

Lattice dynamical properties of antiferromagnetic oxides calculated using self-consistent extended Hubbard functional method

Wooil Yang, Bo Gyu Jang, Young-Woo Son +1

We study the lattice dynamics of antiferromagnetic transition-metal oxides by using self-consistent Hubbard functionals. We calculate the ground states of the oxides with the on-si…

cond-mat.str-el2022★ 15 cited

Intersite Coulomb Interactions in Charge Ordered Systems

Bo Gyu Jang, Minjae Kim, Sang-Hoon Lee +3

Using {\it ab initio} approaches for extended Hubbard interactions coupled to phonons, we reveal that the intersite Coulomb interaction plays important roles in determining various…

cond-mat.mtrl-sci2021★ 22 cited

Ab initio study of lattice dynamics of group IV semiconductors using pseudohybrid functionals for extended Hubbard interactions

Wooil Yang, Seung-Hoon Jhi, Sang-Hoon Lee +1

We study the lattice dynamics of group IV semiconductors using fully ab-initio extended Hubbard functional. The onsite and intersite Hubbard interactions are determined self-consis…

cond-mat.supr-con2020★ 3 cited

Coexistence of spontaneous polarization and superconductivity in hole-doped oxyhydrides ATiO_2H (A=K, Rb, Cs): first-principles study

Minjae Ghim, Nobuya Sato, Ryosuke Akashi +2

The polar metal is a material that hosts both polar distortion and metallicity. Such a material is expected to show exotic magneto-electric phenomena if superconducts. Here, we the…

cond-mat.mtrl-sci2017★ 18 cited

Weyl node assisted conductivity switch in interfacial phase change memory with van der Waals interfaces

Jinwoong Kim, Jeongwoo Kim, Young-Sun Song +3

The interfacial phase-change memory (iPCM) GeTe/Sb2Te3, promising candidates for the next generation non-volatile random-access memories, exhibits fascinating topological propertie…

cond-mat.mes-hall2016

Topological phase transition and quantum spin Hall edge states of antimony few layers

Sung Hwan Kim, Kyung-Hwan Jin, Joonbum Park +3

While two-dimensional topological insulators (2D TI) initiated the field of topological materials, only very few materials were discovered to date and the direct access to their qu…

cond-mat.mes-hall2016★ 33 cited

Quantum electronic transport of topological surface states in beta-Ag2Se nanowire

Jihwan Kim, Ahreum Hwang, Sang-Hoon Lee +8

Single-crystalline β-Ag2Se nanostructures, a new class of 3D topological insulators (TIs), were synthesized using the chemical vapor transport method. The topological surface state…

cond-mat.mtrl-sci2015

Proximity Effect Induced Electronic Properties of Epitaxial Graphene on Bi2Te2Se

Paengro Lee, Kyung-Hwan Jin, Si Jin Sung +10

We report that the π-electrons of graphene can be spin-polarized to create a phase with a significant spin-orbit gap at the Dirac point (DP) using a graphene-interfaced topological…

cond-mat.mes-hall2015★ 32 cited

Topological fate of edge states of Bi single bilayer on Bi(111)

Han Woong Yeom, Kyung-Hwan Jin, Seung-Hoon Jhi

We address the topological nature of electronic states of step edges of Bi(111) films by first principles band structure calculations. We confirm that the dispersion of step edge s…

cond-mat.mes-hall2014★ 12 cited

Transforming a Surface State of Topological Insulator by a Bi Capping Layer

Han Woong Yeom, Sung Hwan Kim, Woo Jong Shin +7

We introduce a dinstint approach to engineer a topologically protected surface state of a topological insulator. By covering the surface of a topological insulator, Bi2Te2Se, with…

cond-mat.mes-hall2014★ 90 cited

Edge and Interfacial States in a 2D Topological Insulator:Bi(111) Bilayer on BiTeSe

Sung Hwan Kim, Kyung-Hwan Jin, Joonbum Park +4

The electronic states of a single Bi(111) bilayer and its edges, suggested as a two dimensional topological insulator, are investigated by scanning tunneling spectroscopy (STS) and…

cond-mat.mtrl-sci2013★ 24 cited

Phonon-induced topological insulating phases in group IV-VI semiconductors

Jinwoong Kim, Seung-Hoon Jhi

Development of topological insulating phases in IV-VI compounds under dynamic lattice deformations is studied using first-principles methods. Unlike the static state of topological…

cond-mat.mes-hall2013

Anomalous Optical Phonon Splittings in Sliding Bilayer Graphene

Seon-Myeong Choi, Seung-Hoon Jhi, Young-Woo Son

We study the variations of electron-phonon coupling and their spectroscopic consequences in response to sliding of two layers in bilayer graphene using first-principles calculation…

cond-mat.mtrl-sci2013★ 3 cited

Spin-Chiral Bulk Fermi Surfaces of BiTeI Proven by Quantum Oscillations

Joonbum Park, E. Kampert, Kyung-Hwan Jin +10

We present the Fermi-surface map of the spin-chiral bulk states for the non-centrosymmetric semiconductor BiTeI using de Haas-van Alphen and Shubnikov-de Haas oscillations. We iden…

cond-mat.mes-hall2012★ 110 cited

Proximity-induced giant spin-orbit interaction in epitaxial graphene on topological insulator

Kyung-Hwan Jin, Seung-Hoon Jhi

Heterostructures of Dirac materials such as graphene and topological insulators provide interesting platforms to explore exotic quantum states of electrons in solids. Here we study…

cond-mat.mtrl-sci2012★ 1 cited

Topological phase transition in Dirac fermionic heterostructures

Jeongwoo Kim, Jinwoong Kim, Ki-Seok Kim +1

Materials with non-trivial topology in their electronic structures enforce the existence of helical Dirac fermionic surface states. We discovered emergent topological phases in the…

cond-mat.mes-hall2011★ 26 cited

The stability of graphene band structures against an external periodic perturbation; Na on Graphene

Choongyu Hwang, Sunyoung Shin, Seon-Myeong Choi +7

We report that the band of graphene sensitively changes as a function of an external potential induced by Na especially when the potential becomes periodic at low temperature.…

cond-mat.mes-hall2010★ 77 cited

Electronic topological transition in sliding bilayer graphene

Young-Woo Son, Seon-Myeong Choi, Yoon Pyo Hong +2

We demonstrate theoretically that the topology of energy bands and Fermi surface in bilayer graphene undergoes a very sensitive transition when extremely tiny lateral interlayer sh…

cond-mat.mes-hall2010★ 188 cited

Controlling Energy Gap of Bilayer Graphene by Strain

Seon-Myeong Choi, Seung-Hoon Jhi, Young-Woo Son

Using the first principles calculations, we show that mechanically tunable electronic energy gap is realizable in bilayer graphene if different homogeneous strains are applied to t…

cond-mat.mes-hall2009★ 651 cited

Effects of Strain on Electronic Properties of Graphene

Seon-Myeong Choi, Seung-Hoon Jhi, Young-Woo Son

We present first-principles calculations of electronic properties of graphene under uniaxial and isotropic strains, respectively. The semi-metallic nature is shown to persist up to…