Transforming a Surface State of Topological Insulator by a Bi Capping Layer

Abstract

We introduce a dinstint approach to engineer a topologically protected surface state of a topological insulator. By covering the surface of a topological insulator, Bi2Te2Se, with a Bi monolayer film, the original surface state is completely removed and three new spin helical surface states, originating from the Bi film, emerge with different dispersion and spin polarization, through a strong electron hybridization. These new states play the role of topological surface states keeping the bulk topological nature intact. This mechanism provides a way to create various different types of topologically protected electron channels on top of a single topological insulator, possibly with tailored properties for various applications.

arXiv comment5 pages, 4 figures

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Cited by in corpus (2)

• Interfacing Quantum Spin Hall and Quantum Anomalous Hall insulators: Bi bilayer on MnBi${}_2$Te${}_4$-family materials
• Atomically Abrupt Topological p-n Junction