12 citations · 22 across the 2 of their papers we have counts for
2 papers
cond-mat.mes-hall2025★ 10 cited
Spatial Control of Charge Doping in n-Type Topological Insulators
Kazuyuki Sakamoto, Hirotaka Ishikawa, Takashi Wake +17
Spatially controlling the Fermi level of topological insulators and keeping its electronic states stable are indispensable processes to put this material into practical use for sem…
cond-mat.mes-hall2014★ 12 cited
Transforming a Surface State of Topological Insulator by a Bi Capping Layer
Han Woong Yeom, Sung Hwan Kim, Woo Jong Shin +7
We introduce a dinstint approach to engineer a topologically protected surface state of a topological insulator. By covering the surface of a topological insulator, Bi2Te2Se, with…