Gap opening in graphene by simple periodic inhomogeneous strain
arXiv:1104.0314 · doi:10.1103/PhysRevB.84.245444
Abstract
Using ab-initio methods, we show that the uniform deformation either leaves graphene (semi)metallic or opens up a small gap yet only beyond the mechanical breaking point of the graphene, contrary to claims in the literature based on tight-binding (TB) calculations. It is possible, however, to open up a global gap by a sine-like one-dimensional inhomogeneous deformation applied along any direction but the armchair one, with the largest gap for the corrugation along the zigzag direction (~0.5 eV) without any electrostatic gating. The gap opening has a threshold character with very sharp rise when the ratio of the amplitude A and the period of the sine wave deformation lambda exceeds (A/lambda)_c ~0.1 and the inversion symmetry is preserved, while it is threshold-less when the symmetry is broken, in contrast with TB-derived pseudo-magnetic field models.
6 pages, 6 figures; (v2) added figures illustrating opening gap in Graphene mesh on BN, expanded analysis illustrating absence of pseudo-magnetic fields in deformed Graphene
References in corpus (14)
- Electric Field Effect in Atomically Thin Carbon Films
- Energy gaps, topological insulator state and zero-field quantum Hall effect in graphene by strain engineering
- Atomic Structure of Graphene on SiO2
- A tight-binding approach to uniaxial strain in graphene
- Effects of Strain on Electronic Properties of Graphene
- Nonlinear elasticity of monolayer graphene
- Merging of Dirac points in a two-dimensional crystal
- Gap opening in graphene by shear strain
- Midgap states and charge inhomogeneities in corrugated graphene
- A new magnetic field dependence of Landau levels on a graphene like structure
- Graphene Physics in Graphite
- Gaps tunable by electrostatic gates in strained graphene
- Midgap states in corrugated graphene: Ab-initio calculations and effective field theory
- Tuning electronic properties of corrugated graphene: confinement, curvature and band gap opening
Cited by in corpus (18)
- Electronic and optical properties of strained graphene and other strained 2D materials: a review
- Generalized effective hamiltonian for graphene under non-uniform strain
- Cyclic Density Functional Theory : A route to the first principles simulation of bending in nanostructures
- Landau Levels in Uniaxially Strained Graphene: A Geometrical Approach
- Sublattice asymmetry of impurity doping in graphene: A review
- Phase-space representation of Landau and electron coherent states for uniaxially strained graphene
- Large-scale transfer and characterization of macroscopic periodically nano-rippled graphene
- Strain- and Adsorption-Dependent Electronic States and Transport or Localization in Graphene
- Characterization of electronic structure of periodically strained graphene
- Anomalous Floquet tunneling in uniaxially strained graphene
- Ab initio framework for systems with helical symmetry: theory, numerical implementation and applications to torsional deformations in nanostructures
- Shear-Strain Controlled High-Harmonic Generation in Graphene
- Impact of the domain structure in ferroelectric substrate on graphene conductance (authors' review)
- First-principles calculations of electrical conductivities of edge-modified graphene nanoribbons: strain effect
- Linking structures of doubly charged nodal surfaces in centrosymmetric superconductors
- Analytical calculation of electron's group velocity surfaces in uniform strained graphene
- Quantum materials interfaces: graphene/Bismuth (111) heterostructures
- Graphene separation and stretching induced by piezoelectric effect of ferroelectric domains: impact on the conductance of graphene channel