Sublattice asymmetry of impurity doping in graphene: A review

Abstract

In this review we highlight recent theoretical and experimental work on sublattice asymmetric doping of impurities in graphene, with a focus on substitutional Nitrogen dopants. It is well known that one current limitation of graphene in regards to its use in electronics is that in its ordinary state it exhibits no band gap. By doping one of its two sublattices preferentially it is possible to not only open such a gap, which can furthermore be tuned through control of the dopant concentration, but in theory produce quasi-ballistic transport of electrons in the undoped sublattice, both important qualities for any graphene device to be used competetively in future technology. We outline current experimental techniques for synthesis of such graphene monolayers and detail theoretical efforts to explain the mechanisms responsible for the effect, before suggesting future research directions in this nascent field.

arXiv comment20 pages, 4 figures. Accepted for publication in Beilstein Journal of Nanotechnology

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Cited by in corpus (7)

• Toward Moiré engineering in 2D materials via dislocation theory
• Substitutional 4d and 5d Impurities in Graphene
• Valley Hall Effect and Non-Local Resistance in Locally Gapped Graphene
• Valley current generation using biased bilayer graphene dots
• Electronic transport in graphene nanoribbons with sublattice-asymmetric doping
• Sublattice Segregation of Hydrogen Adsorbates in Carbon Nanotubes
• Nitrogen-Nitrogen Bonds Violate Stability of N-Doped Graphene