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D. Esseni

5 papers hereh-index 416.1k citations311 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • first author1
  • middle author2
  • last author2

Across the 5 of 5 papers where every author was matched, so the position is known.

fields
  • cs.ET3
  • cond-mat.mes-hall1
  • physics.app-ph1

identity via Semantic Scholar / OpenAlex

activity
20172022
most citedPiezoresistive Properties of Suspended Graphene Membranes under Uniaxial and Biaxial Strain in Nanoelectromechanical Pressure Sensors

160 citations · 171 across the 2 of their papers we have counts for

collaborators
Showing cs.ETShow all

3 papers · 1 filter

cs.ET2022★ 11 cited

Operation and Design of Ferroelectric FETs for a BEOL Compatible Device Implementation

Daniel Lizzit, David Esseni

We present a study based on numerical simulations and comparative analysis of recent experimental data concerning the operation and design of FeFETs. Our results show that a proper…

cs.ET2021

Ferroelectric based FETs and synaptic devices for highly energy efficient computational technologies

David Esseni, Riccardo Fontanini, Daniel Lizzit +3

The technological exploitation of ferroelectricity in CMOS electron devices offers new design opportunities, but also significant challenges from an integration, optimization and m…

cs.ET2021

Modelling and design of FTJs as high reading-impedance synaptic devices

Riccardo Fontanini, Marco Massarotto, Ruben Specogna +3

We present an in-house modelling framework for Ferroelectric Tunnelling Junctions (FTJ), and an insightful study of the design of FTJs as synaptic devices. Results show that a mode…

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