Mobility enhancement in CVD-grown monolayer MoS2 via patterned substrate induced non-uniform straining
arXiv:2303.03694 · doi:10.1021/acs.nanolett.3c01774
Abstract
The extraordinary mechanical properties of 2D TMDCs make them ideal candidates for investigating strain-induced control of various physical properties. Here we explore the role of non-uniform strain in modulating optical, electronic and transport properties of semiconducting, chemical vapour deposited monolayer MoS2, on periodically nanostructured substrates. A combination of spatially resolved spectroscopic and electronic properties explore and quantify the differential strain distribution and carrier density on a monolayer, as it conformally drapes over the periodic nanostructures. The observed accumulation in electron density at the strained regions is supported by theoretical calculations which form the likely basis for the ensuing 60x increase in field effect mobility in strained samples. Though spatially non-uniform, the pattern induced strain is shown to be readily controlled by changing the periodicity of the nanostructures thus providing a robust yet useful macroscopic control on strain and mobility in these systems.
References in corpus (23)
- Atomically thin MoS2: A new direct-gap semiconductor
- Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition
- Bandgap Engineering of Strained Monolayer and Bilayer MoS2
- Mobility engineering and metal-insulator transition in monolayer MoS2
- Local strain engineering in atomically thin MoS2
- Symmetry-dependent phonon renormalization in monolayer MoS2 transistor
- Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2
- The Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors
- Towards Intrinsic Charge Transport in Monolayer Molybdenum Disulfide by Defect and Interface Engineering
- Elastic Properties of Chemical-Vapor-Deposited Monolayer MoS2, WS2, and Their Bilayer Heterostructures
- Band Gap Engineering with Ultralarge Biaxial Strains in Suspended Monolayer MoS2
- Deterministic strain-induced arrays of quantum emitters in a two-dimensional semiconductor
- Irradiation of Nanostrained Monolayer WSe for Site-Controlled Single-Photon Emission up to 150 K
- Biaxial strain tuning of the optical properties of single-layer transition metal dichalcogenides
- Charge Scattering and Mobility in Atomically Thin Semiconductors
- Imaging strain-localized exciton states in nanoscale bubbles in monolayer WSe2 at room temperature
- Control of biaxial strain in single-layer Molybdenite using local thermal expansion of the substrate
- Elastic Bending Modulus of Single-Layer Molybdenum Disulphide (MoS2): Finite Thickness Effect
- Strained bubbles in van der Waals heterostructures as local emitters of photoluminescence with adjustable wavelength
- The Observation of Percolation-Induced 2D Metal-Insulator Transition in a Si MOSFET
- Intrinsic properties of suspended MoS2 on SiO2/Si pillar arrays for nanomechanics and optics
- Van der Waals interaction affects wrinkle formation in two-dimensional materials
- Ultra Localized Optoelectronic Properties of Nanobubbles in 2D Semiconductors