activity
20132016
most citedIntrinsic Electron Mobility Limits in beta-Ga2O3

423 citations · 1.2k across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2016★ 423 cited

Intrinsic Electron Mobility Limits in beta-Ga2O3

Nan Ma, Nicholas Tanen, Amit Verma +5

By systematically comparing experimental and theoretical transport properties, we identify the polar optical phonon scattering as the dominant mechanism limiting electron mobility…

cond-mat.mtrl-sci2015★ 386 cited

Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignment

Rusen Yan, Sara Fathipour, Yimo Han +8

Van der Waals (vdW) heterojunctions composed of 2-dimensional (2D) layered materials are emerging as a solid-state materials family that exhibit novel physics phenomena that can po…

cond-mat.mtrl-sci2015★ 119 cited

Carrier statistics and quantum capacitance effects on mobility extraction in two-dimensional crystal semiconductor field-effect transistors

Nan Ma, Debdeep Jena

In this work, the consequence of the high band-edge density of states on the carrier statistics and quantum capacitance in transition metal dichalcogenide two-dimensional semicondu…

cond-mat.mes-hall2013★ 236 cited

Charge Scattering and Mobility in Atomically Thin Semiconductors

Nan Ma, Debdeep Jena

The electron transport properties of atomically thin semiconductors such as MoS2 have attracted significant recent scrutiny and controversy. In this work, the scattering mechanisms…

cond-mat.mtrl-sci2013★ 50 cited

Interband Tunneling in 2D Crystal Semiconductors

Nan Ma, Debdeep Jena

Interband quantum tunneling of electrons in semiconductors is of intense recent interest as the underlying transport mechanism in tunneling field-effect transistors. Such transisto…