387 citations · 1k across the 11 of their papers we have counts for
12 papers
Mexican Hat and Rashba Bands in Few-Layer van der Waals Materials
Darshana Wickramaratne, Ferdows Zahid, Roger K. Lake
The valence band of a variety of few-layer, two-dimensional materials consists of a ring of states in the Brillouin zone. The energy-momentum relation has the form of a `Mexican ha…
Direct tunneling through high- amorphous HfO: effects of chemical modification
Yin Wang, Zhizhou Yu, Ferdows Zahid +4
We report first principles modeling of quantum tunneling through amorphous HfO dielectric layer of metal-oxide-semiconductor (MOS) nanostructures in the form of n-Si/HfO/Al…
Electronic and Thermoelectric Properties of Few-Layer Transition Metal Dichalcogenides
Darshana Wickramaratne, Ferdows Zahid, Roger K. Lake
The electronic and thermoelectric properties of one to four monolayers of MoS, MoSe, WS, and WSe are calculated. For few layer thicknesses,the near degenera…
Band offset of GaAs/AlxGa1-xAs heterojunctions from atomistic first principles
Yin Wang, Ferdows Zahid, Yu Zhu +3
Using an atomistic first principles approach, we investigate the band offset of the GaAs/AlxGa1-xAs heterojunctions for the entire range of the Al doping concentration 0<x<=1. We a…
A generic tight-binding model for monolayer, bilayer and bulk MoS2
Ferdows Zahid, Lei Liu, Yu Zhu +2
Molybdenum disulfide (MoS2) is a layered semiconductor which has become very important recently as an emerging electronic device material. Being an intrinsic semiconductor the two-…
Electronic structures of III-V zinc-blende semiconductors from atomistic first principles
Yin Wang, Haitao Yin, Ronggen Cao +5
For analyzing quantum transport in semiconductor devices, accurate electronic structures are critical for quantitative predictions. Here we report theoretical analysis of electroni…