First-principles study of the thermoelectric properties of quaternary tetradymite BiSbSeTe2
arXiv:1802.02811 · doi:10.1088/1361-6463/aace7b
Abstract
The electronic and phonon transport properties of quaternary tetradymite BiSbSeTe2 are investigated using first-principles approach and Boltzmann transport theory. Unlike the binary counterpart Bi2Te3, we obtain a pair of Rashba splitting bands induced by the absence of inversion center. Such unique characteristic could lead to a large Seebeck coefficient even at relatively higher carrier concentration. Besides, we find an ultralow lattice thermal conductivity of BiSbSeTe2, especially along the interlayer direction, which can be traced to the extremely small phonon relaxation time mainly induced by the mixed covalent bonds. As a consequence, a considerably large ZT value of ~2.0 can be obtained at 500 K, indicating that the unique lattice structure of BiSbSeTe2 caused by isoelectronic substitution could be an advantage to achieving high thermoelectric performance.
References in corpus (11)
- Phonons and related properties of extended systems from density-functional perturbation theory
- BoltzTraP. A code for calculating band-structure dependent quantities
- Hidden spin polarization in inversion-symmetric bulk crystals
- First-principles study of anisotropic thermoelectric transport properties of IV-VI semiconductor compounds SnSe and SnS
- Low thermal conductivity and triaxial phononic anisotropy of SnSe
- Higher-order contributions to the Rashba-Bychkov effect with application to Bi/Ag(111) surface alloy
- Quasiparticle Effects in the Bulk and Surface-State Bands of Bi2Se3 and Bi2Te3 Topological Insulators
- Effects of van der Waals interactions and quasiparticle corrections on the electronic and transport properties of Bi2Te3
- Maximizing the thermoelectric performance of topological insulator Bi2Te3 films in the few-quintuple layer regime
- The quasiparticle band gap in the topological insulator Bi2Te3
- Prediction of Band Structure of -related Binary and Ternary Thermoelectric Materials