High transparency Bi2Se3 topological insulator nanoribbon Josephson junctions with low resistive noise properties
arXiv:1910.00280 · doi:10.1063/1.5123554
Abstract
BiSe nanoribbons, grown by catalyst-free Physical Vapour Deposition, have been used to fabricate high quality Josephson junctions with Al superconducting electrodes. The conductance spectra (dI/dV) of the junctions show clear dip-peak structures characteristic of multiple Andreev reflections. The temperature dependence of the dip-peak features reveals a highly transparent Al/BiSe topological insulator nanoribbon interface and Josephson junction barrier. This is supported by the high values of the BiSe induced gap and of IR (I critical current, R normal resistance of the junction) product both of the order of 160 eV, a value close to the Al gap. The devices present an extremely low relative resistance noise below 110 m/Hz comparable to the best Al tunnel junctions, which indicates a high stability in the transmission coefficients of transport channels. The ideal Al/BiSe interface properties, perfect transparency for Cooper pair transport in conjunction with low resistive noise make these junctions a suitable platform for further studies of the induced topological superconductivity and Majorana bound states physics.
arXiv commentThe following article has been accepted by Applied Physics Letters
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