activity
20192023
most citedBulk-Free Topological Insulator Bi2Se3 nanoribbons with Magnetotransport Signatures of Dirac Surface States

40 citations · 88 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.supr-con2023★ 3 cited

Current-phase relation of a short multi-mode Bi2Se3 topological insulator nanoribbon Josephson junction with ballistic transport modes

Ananthu P. Surendran, Domenico Montemurro, Gunta Kunakova +8

We used the asymmetric superconducting quantum interference device (SQUID) technique to extract the current phase relation (CPR) of a Josephson junction with a 3D-topological insul…

cond-mat.mes-hall2021

Quantitative infrared near-field imaging of suspended topological insulator nanostructures

C. Lupo, J. Andzane, D. Montemurro +5

The development of nanoscale solid-state devices exploiting the promising topological surface states of topological insulator materials requires careful device engineering and impr…

cond-mat.supr-con2020★ 24 cited

Topological insulator nanoribbon Josephson junctions: evidence for size effect in transport properties

Gunta Kunakova, Ananthu P. Surendran, Domenico Montemurro +6

We have used BiSe nanoribbons, grown by catalyst-free Physical Vapor Deposition to fabricate high quality Josephson junctions with Al superconducting electrodes. In our dev…

cond-mat.supr-con2019★ 21 cited

High transparency Bi2Se3 topological insulator nanoribbon Josephson junctions with low resistive noise properties

Gunta Kunakova, Thilo Bauch, Edoardo Trabaldo +3

BiSe nanoribbons, grown by catalyst-free Physical Vapour Deposition, have been used to fabricate high quality Josephson junctions with Al superconducting electrodes. The co…

cond-mat.mes-hall2019★ 40 cited

Bulk-Free Topological Insulator Bi2Se3 nanoribbons with Magnetotransport Signatures of Dirac Surface States

Gunta Kunakova, Luca Galletti, Sophie Charpentier +6

Many applications for topological insulators (TIs) as well as new phenomena require devices with reduced dimensions. While much progress has been made to realize thin films of TIs…