Evidence for nitrogen gas surface doping of the Bi${}_2$Se${}_3$ topological insulator

Abstract

Using scanning tunneling spectroscopy we have studied the effects of nitrogen gas exposure on the bismuth selenide density of states. We observe a shift in the Dirac point which is qualitatively consistent with theoretical modeling of nitrogen binding to selenium vacancies. In carefully controlled measurements, Bi${}_2$Se${}_3$ crystals were initially cleaved in a helium gas environment and then exposed to a 22 SCFH flow of ultra-high purity N${}_2$ gas. We observe a resulting change in the spectral curves, with the exposure effect saturating after approximately 50 minutes, ultimately bringing the Dirac point about 50 meV closer to the Fermi level. These results are compared to density functional theoretical calculations, which support a picture of $N_2$ molecules physisorbing near Se vacancies and dissociating into individual N atoms which then bind strongly to Se vacancies. In this interpretation, the binding of the N atom to a Se vacancy site removes the surface defect state created by the vacancy and changes the position of the Fermi energy with respect to the Dirac point.

9 pages, 3 figures

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