Large magnetoresistance and Fermi surface study of Sb$_2$Se$_2$Te single crystal

K. Shrestha; V. Marinova; D. Graf; B. Lorenz; C. W. Chu

doi:10.1063/1.4998575

paper

Large magnetoresistance and Fermi surface study of Sb $_{2}$ Se $_{2}$ Te single crystal

arXiv:1704.02682 · doi:10.1063/1.4998575

Abstract

We have studied the magnetotransport properties of a Sb $_{2}$ Se $_{2}$ Te single crystal. Magnetoresistance (MR) is maximum when the magnetic field is perpendicular to the sample surface and reaches to a value of 1100\% at $B$ =31 T with no sign of saturation. MR shows Shubnikov de Haas (SdH) oscillations above $B$ =15 T. The frequency spectrum of SdH oscillations consists of three distinct peaks at $α$ =32 T, $β$ =80 T and $γ$ =117 T indicating the presence of three Fermi surface pockets. Among these frequencies, $β$ is the prominent peak in the frequency spectrum of SdH oscillations measured at different tilt angles of the sample with respect to the magnetic field. From the angle dependence $β$ and Berry phase calculations, we have confirmed the trivial topology of the $β$ -pocket. The cyclotron masses of charge carriers, obtained by using the Lifshitz-Kosevich formula, are found to be $m_{β}^{*} = 0.16 m_{o}$ and $m_{γ}^{*} = 0.63 m_{o}$ for the $β$ and $γ$ bands respectively. Large MR of Sb $_{2}$ Se $_{2}$ Te is suitable for utilization in electronic instruments such as a computer hard disc, high field magnetic sensors, and memory devices.

http://aip.scitation.org/doi/10.1063/1.4998575

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Large magnetoresistance and Fermi surface study of Sb2​Se2​Te single crystal

Abstract

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Large magnetoresistance and Fermi surface study of Sb $_{2}$ Se $_{2}$ Te single crystal