Physical properties of KMgBi single crystals
arXiv:1610.02699 · doi:10.1103/PhysRevB.95.035209
Abstract
KMgBi single crystals are grown by using the Bi flux successfully. KMgBi shows semiconducting behavior with a metal-semiconductor transition at high temperature region and a resistivity plateau at low temperature region, suggesting KMgBi could be a topological insulator with a very small band gap. Moreover, KMgBi exhibits multiband feature with strong temperature dependence of carrier concentrations and mobilities.
6 pages, 5 figures
References in corpus (9)
- Titanic Magnetoresistance in WTe2
- Weyl semimetal phase in non-centrosymmetric transition metal monophosphides
- The superconductivity at 18 K in LiFeAs system
- LiFeAs: An Intrinsic FeAs-based Superconductor with Tc = 18K
- Topological origin of subgap conductance in insulating bilayer graphene
- Two-dimensional Dirac fermions in a topological insulator: transport in the quantum limit
- Type-II Dirac fermions in the PtSe class of transition metal dichalcogenides
- Structure, antiferromagnetism and superconductivity of the layered iron arsenide NaFeAs
- Anisotropic Magnetotransport and Exotic Longitudinal Linear Magnetoresistance in WTe2 Crystals