Controlling the 2DEG states evolution at a metal/Bi${}_2$Se${}_3$ interface

Abstract

We have demonstrated that the evolution of the two-dimensional electron gas (2DEG) system at an interface of metal and the model topological insulator (TI) Bi${}_2$Se${}_3$ can be controlled by choosing an appropriate kind of metal elements and by applying a low temperature evaporation procedure. In particular, we have found that only topological surface states (TSSs) can exist at a Mn/Bi${}_2$Se${}_3$ interface, which would be useful for implementing an electric contact with surface current channels only. The existence of the TSSs alone at the interface was confirmed by angle-resolved photoemission spectroscopy (ARPES). Based on the ARPES and core-level x-ray photoemission spectroscopy measurements, we propose a cation intercalation model to explain our findings.

13 pages, 4 figures

References in corpus (7)

• Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface
• A topological Dirac insulator in a quantum spin Hall phase : Experimental observation of first strong topological insulator
• First direct observation of Spin-textures in Topological Insulators : Spin-resolved ARPES as a probe of topological quantum spin Hall effect and Berry's phase
• Topological Surface States Protected From Backscattering by Chiral Spin Texture
• Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi2Se3
• Emergent quantum confinement at topological insulator surfaces
• Spin-orbit interaction effect in the electronic structure of \BiTe \ observed by angle-resolved photoemission spectroscopy

Cited by in corpus (2)

• Growth, Morphology and Stability of Au in Contact with the Bi2Se3(0001) Surface
• Atomically Abrupt Topological p-n Junction