Controlling the 2DEG states evolution at a metal/Bi${}_2$Se${}_3$ interface

Abstract

We have demonstrated that the evolution of the two-dimensional electron gas (2DEG) system at an interface of metal and the model topological insulator (TI) Bi${}_2$Se${}_3$ can be controlled by choosing an appropriate kind of metal elements and by applying a low temperature evaporation procedure. In particular, we have found that only topological surface states (TSSs) can exist at a Mn/Bi${}_2$Se${}_3$ interface, which would be useful for implementing an electric contact with surface current channels only. The existence of the TSSs alone at the interface was confirmed by angle-resolved photoemission spectroscopy (ARPES). Based on the ARPES and core-level x-ray photoemission spectroscopy measurements, we propose a cation intercalation model to explain our findings.

arXiv comment13 pages, 4 figures

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Cited by in corpus (4)

• Growth, Morphology and Stability of Au in Contact with the Bi2Se3(0001) Surface
• Topological insulator homojunctions including magnetic layers: the example of n-p type ($n$-QLs Bi${}_2$Se${}_3$/Mn-Bi${}_2$Se${}_3$) heterostructures
• Interfacial spin-orbit coupling in superconducting hybrid systems
• Atomically Abrupt Topological p-n Junction