Topological insulator homojunctions including magnetic layers: the example of n-p type ($n$-QLs Bi${}_2$Se${}_3$/Mn-Bi${}_2$Se${}_3$) heterostructures

Abstract

Homojunctions between Bi${}_2$Se${}_3$ and its Mn-doped phase are investigated as a sample geometry to study the influence of spin degrees of freedom on topological insulator properties. $n$ quintuple layers (QLs) of Bi${}_2$Se${}_3$ are grown ontop of Mn-doped Bi${}_2$Se${}_3$ by molecular beam epitaxy for $0\le n\le 30$QLs, allowing to unhamperedly monitor the development of electronic and topological properties by surface sensitive techniques like angle resolved photoemission spectroscopy. With increasing $n$, a Mn-induced gap at the Dirac point is gradually filled in an "hourglass" fashion to reestablish a topological surface state at $n\sim 9$QLs. Our results suggest a competition of upwards and downwards band bending effects due to the presence of an n-p type interface, which can be used to tailor topological and quantum well states independently.

5 pages, 5 figures

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• Topological insulator homojunctions including magnetic layers: the example of n-p type ($n$-QLs Bi${}_2$Se${}_3$/Mn-Bi${}_2$Se${}_3$) heterostructures

Cited by in corpus (6)

• Influence of an anomalous temperature-dependence of the phase coherence length on the conductivity of magnetic topological insulators
• Step-edge assisted large scale FeSe monolayer growth on epitaxial Bi2Se3 thin films
• Magnetic properties of Mn-doped Bi${}_2$Se${}_3$ topological insulators: ab initio calculations
• Local moment formation and magnetic coupling of Mn guest atoms in Bi${}_2$Se${}_3$: a low-temperature ferromagnetic resonance study
• Topological insulator homojunctions including magnetic layers: the example of n-p type ($n$-QLs Bi${}_2$Se${}_3$/Mn-Bi${}_2$Se${}_3$) heterostructures
• Twin Domain Structure in Magnetically Doped Topological Insulators