collaborators

1 paper

cond-mat.mtrl-sci2002

Step bunching during Si(001) homoepitaxy caused by the surface diffusion anisotropy

J. Myslivecek, C. Schelling, F. Schaffler +4

Scanning tunneling microscopy experiments show that the unstable growth morphology observed during molecular beam homoepitaxy on slightly vicinal Si(001) surfaces consists of strai…