Interband absorption edge in topological insulators Bi(TeSe)
arXiv:1711.08177 · doi:10.1103/PhysRevB.96.235202
Abstract
We have investigated the optical properties of thin films of topological insulators BiTe, BiSe and their alloys Bi(TeSe) on BaF substrates by a combination of infrared ellipsometry and reflectivity in the energy range from 0.06 to 6.5 eV. For the onset of interband absorption in BiSe, after the correction for the Burstein-Moss effect, we find the value of direct bandgap of meV at 10 K. Our data supports the picture that BiSe has a direct band gap located at the point in the Brillouin zone and that the valence band reaches up to the Dirac point and has the shape of a downward oriented paraboloid, i.e. without a camel-back structure. In BiTe, the onset of strong direct interband absorption at 10 K is at a similar energy of about 200 meV, with a weaker additional feature at about 170 meV. Our data support the recent GW band structure calculations suggesting that the direct interband transition does not occur at the point but near the Z-F line of the Brillouin zone. In the Bi(TeSe) alloy, the energy of the onset of direct interband transitions exhibits a maximum near (i.e. the composition of BiTeSe), suggesting that the crossover of the direct interband transitions between the two points in the Brillouin zone occurs close to this composition.
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Cited by in corpus (8)
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- Revealing Optical Transitions and Carrier Recombination Dynamics within the Bulk Band Structure of Bi2Se3
- Landau level spectroscopy of BiTe
- Van Hove Singularity Arising from Mexican-Hat-Shaped Inverted Bands in the Topological Insulator Sn-doped BiSbTeS
- Electronic band structure of Sb2Te3
- Designer topological insulator with enhanced gap and suppressed bulk conduction in Bi2Se3/Sb2Te3 ultra-short period superlattices
- Observation of optical absorption correlated with surface state of topological insulator
- Anisotropy in the dielectric function of BiTe from first principles: From the UV-visible to the infrared range