The hole Fermi surface in BiSe probed by quantum oscillations
arXiv:1603.02603 · doi:10.1103/PhysRevB.93.155206
Abstract
Transport and torque magnetometry measurements are performed at high magnetic fields and low temperatures in a series of p-type (Ca-doped) BiSe crystals. The angular dependence of the Shubnikov-de Haas and de Haas-van Alphen quantum oscillations enables us to determine the Fermi surface of the bulk valence band states as a function of the carrier density. At low density, the angular dependence exhibits a downturn in the oscillations frequency between and , reflecting a bag-shaped hole Fermi surface. The detection of a single frequency for all tilt angles rules out the existence of a Fermi surface with different extremal cross-sections down to ~meV. There is therefore no signature of a camel-back in the valence band of our bulk samples, in accordance with the direct band gap predicted by calculations.
A supplemental material file giving a more detailed description of our work is available upon request
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Cited by in corpus (5)
- Interband absorption edge in topological insulators Bi(TeSe)
- Bulk and surface spin conductivity in topological insulators with hexagonal warping
- Coexistence of bulk and surface states probed by Shubnikov-de Haas oscillations in BiSe with high charge-carrier density
- Ultrahigh magnetic field spectroscopy reveals the band structure of the 3D topological insulator BiSe
- Observation of optical absorption correlated with surface state of topological insulator