Doping-dependent charge dynamics in CuxBi2Se3
arXiv:1409.5206 · doi:10.1103/PhysRevB.90.094503
Abstract
Superconducting CuxBi2Se3 has attracted significant attention as a candidate topological superconductor. Besides inducing superconductivity, the introduction of Cu atoms to this material has also been observed to produce a number of unusual features in DC transport and magnetic susceptibility measurements. To clarify the effect of Cu doping, we have performed a systematic optical spectroscopic study of the electronic structure of CuxBi2Se3 as a function of Cu doping. Our measurements reveal an increase in the conduction band effective mass, while both the free carrier density and lifetime remain relatively constant for Cu content greater than x=0.15. The increased mass naturally explains trends in the superfluid density and residual resistivity as well as hints at the complex nature of Cu doping in Bi2Se3.
7 pages, 4 figures
References in corpus (7)
- Electrodynamics of Correlated Electron Materials
- Strong surface scattering in ultrahigh mobility Bi2Se3 topological insulator crystals
- Bulk superconducting phase with a full energy gap in the doped topological insulator Cu_xBi_2Se_3
- Controlling Curie temperature in (Ga,Ms)As through location of the Fermi level within the impurity band
- Electrochemical synthesis and superconducting phase diagram of Cu_xBi2Se3
- Optical evidence of surface state suppression in Bi based topological insulators
- Anomalous suppression of the superfluid density in the CuxBi2Se3 superconductor upon progressive Cu intercalation