Bulk Fermi surface and electronic properties of Cu${}_{0.07}$Bi${}_2$Se${}_3$

Abstract

The electronic properties of Cu${}_{0.07}$Bi${}_2$Se${}_3$ have been investigated using Shubnikov-de Haas and optical reflectance measurements. Quantum oscillations reveal a bulk, three-dimensional Fermi surface with anisotropy $k_F^c/k_F^{ab}\approx$ 2 and a modest increase in free-carrier concentration and in scattering rate with respect to the undoped Bi${}_2$Se${}_3$, also confirmed by reflectivity data. The effective mass is almost identical to that of Bi${}_2$Se${}_3$. Optical conductivity reveals a strong enhancement of the bound impurity bands with Cu addition, suggesting that a significant number of Cu atoms enter the interstitial sites between Bi and Se layers or may even substitute for Bi. This conclusion is also supported by X-ray diffraction measurements, where a significant increase of microstrain was found in Cu${}_{0.07}$Bi${}_2$Se${}_3$, compared to Bi${}_2$Se${}_3$.

Accepted to Phys. Rev B (R)

References in corpus (5)

• Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface
• Bulk Fermi surface coexistence with Dirac surface state in Bi${}_2$Se${}_3$: a comparison of photoemission and Shubnikov-de Haas measurements
• Strong surface scattering in ultrahigh mobility Bi2Se3 topological insulator crystals
• Bulk superconducting phase with a full energy gap in the doped topological insulator Cu_xBi_2Se_3
• Quantum oscillations in topological superconductor candidate Cu${}_{0.25}$Bi${}_2$Se${}_3$

Cited by in corpus (4)

• Thickness and strain effects on the thermoelectric transport in nanostructured Bi2Se3
• Dependence of superconductivity in CuxBi2Se3 on quenching conditions
• Coexistence of bulk and surface states probed by Shubnikov-de Haas oscillations in Bi${}_2$Se${}_3$ with high charge-carrier density
• Doping-dependent charge dynamics in CuxBi2Se3