Landau level spectroscopy of BiTe
arXiv:2004.13565 · doi:10.1103/PhysRevB.102.085201
Abstract
Here we report on Landau level spectroscopy in magnetic fields up to 34 T performed on a thin film of topological insulator BiTe epitaxially grown on a BaF substrate. The observed response is consistent with the picture of a direct-gap semiconductor in which charge carriers closely resemble massive Dirac particles. The fundamental band gap reaches ~meV at low temperatures and it is not located on the trigonal axis, thus displaying either six or twelvefold valley degeneracy. Notably, our magneto-optical data do not indicate any band inversion. This suggests that the fundamental band gap is relatively distant from the point where profound inversion exists andgives rise to relativistic-like surface states of BiTe.
arXiv comment12 pages, 11 figures, to be published in Phys. Rev. B
References in corpus (25)
- Topological Insulators
- Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
- Quantum Spin Hall Insulator State in HgTe Quantum Wells
- First observation of Spin-Momentum Helical Locking in Bi2Se3 and Bi2Te3, demonstration of Topological-Order at 300K and a realization of topological-transport-regime
- Model Hamiltonian for Topological Insulators
- STM imaging of electronic waves on the surface of BiTe: topologically protected surface states and hexagonal warping effects
- Persistence of Topological Order and Formation of Quantum Well States in Topological Insulators Bi2(Se,Te)3 under Ambient Conditions
- Quasiparticle Effects in the Bulk and Surface-State Bands of Bi2Se3 and Bi2Te3 Topological Insulators
- Quasi-classical cyclotron resonance of Dirac fermions in highly doped graphene
- Magneto-optics of massive Dirac fermions in bulk Bi2Se3
- Bulk Band Structure of BiTe
- Fine structure of "zero-mode" Landau levels in HgTe/HgCdTe quantum wells
- Negative longitudinal magnetoresistance from anomalous N=0 Landau level in topological materials
- The quasiparticle band gap in the topological insulator Bi2Te3
- Anisotropic effect of warping on the lifetime broadening of topological surface states in angle-resolved photoemission from BiTe
- Measure of Diracness in two-dimensional semiconductors
- Semirelativity in Semiconductors: a Review
- Cyclotron motion in the vicinity of a Lifshitz transition in graphite
- Interband absorption edge in topological insulators Bi(TeSe)
- Landau level spectroscopy of relativistic fermions with low Fermi velocity in Bi2Te3 three-dimensional topological insulator
- Infrared electrodynamics and ferromagnetism in the topological semiconductors BiTe and Mn-doped BiTe
- Doping of Bi2Te3 using electron irradiation
- Avoided level crossing at the magnetic field induced topological phase transition due to spin-orbital mixing
- Theory of electron spin resonance in bulk topological insulators Bi2Se3, Bi2Te3 and Sb2Te3
- Nonperturbative Matrix Mechanics Approach to Spin-Split Landau Levels and g-Factor in Spin-Orbit Coupled Solids