activity
20152025
most citedNegative longitudinal magnetoresistance from anomalous N=0 Landau level in topological materials

57 citations · 108 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mes-hall2025

Spontaneous Breaking of the SU(3) Flavor Symmetry in a Quantum Hall Valley Nematic

G. Krizman, A. Kazakov, C. -W. Cho +10

Two-dimensional quantum materials can host original electronic phases that arise from the interplay of electronic correlations, symmetry and topology. In particular, the spontaneou…

cond-mat.mes-hall2024★ 17 cited

Valley-Polarized quantum Hall phase in a strain-controlled Dirac system

G. Krizman, J. Bermejo-Ortiz, T. Zakusylo +9

In multivalley systems, the valley pseudospin offers rich physics going from encoding of information by its polarization (valleytronics), to exploring novel phases of matter when i…

cond-mat.mtrl-sci2023★ 14 cited

Electronic band structure of Sb2Te3

I. Mohelsky, J. Wyzula, F. Le Mardele +11

Here we report on Landau level spectroscopy of an epitaxially grown thin film of the topological insulator Sb2Te3, complemented by ellipsometry and magneto-transport measurements.…

cond-mat.mes-hall2020★ 20 cited

Landau level spectroscopy of BiTe

I. Mohelsky, A. Dubroka, J. Wyzula +9

Here we report on Landau level spectroscopy in magnetic fields up to 34 T performed on a thin film of topological insulator BiTe epitaxially grown on a BaF substrate. T…

cond-mat.mes-hall2017★ 57 cited

Negative longitudinal magnetoresistance from anomalous N=0 Landau level in topological materials

B. A. Assaf, T. Phuphachong, E. Kampert +8

Negative longitudinal magnetoresistance (NLMR) is shown to occur in topological materials in the extreme quantum limit, when a magnetic field is applied parallel to the excitation…

cond-mat.mes-hall2015

Massive and massless Dirac fermions in Pb1-xSnxTe topological crystalline insulator probed by magneto-optical absorption

B. A. Assaf, T. Phuphachong, V. V. Volobuev +5

Dirac fermions in condensed matter physics hold great promise for novel fundamental physics, quantum devices and data storage applications. IV-VI semiconductors, in the inverted re…