Thermoelectric properties of 3D topological insulator: Direct observation of topological surface and its gap opened states
arXiv:1703.10736 · doi:10.1103/PhysRevMaterials.1.054202
Abstract
We report thermoelectric (TE) properties of topological surface Dirac states (TSDS) in three-dimensional topological insulators (3D-TIs) purely isolated from the bulk by employing single crystal BiSbTeSe films epitaxially grown in the ultrathin limit. Two intrinsic nontrivial topological surface states, a metallic TSDS (m-TSDS) and a gap-opened semiconducting topological state (g-TSDS), are successfully observed by electrical transport, and important TE parameters (electrical conductivity (), thermal conductivity (), and thermopower ()) are accurately determined. Pure m-TSDS gives =-44 μVK, which is an order of magnitude higher than those of the conventional metals and the value is enhanced to -212 μVK for g-TSDS. It is clearly shown that the semi-classical Boltzmann transport equation (SBTE) in the framework of constant relaxation time () most frequently used for conventional analysis cannot be valid in 3D-TIs and strong energy dependent relaxation time beyond the Born approximation is essential for making intrinsic interpretations. Although is protected on the m-TSDS, is greatly influenced by the disorder on the topological surface, giving a dissimilar effect between topologically protected electronic conduction and phonon transport.
arXiv comment15 pages, 4 figures
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