Simple mechanism that breaks the Hall effect linearity at low temperatures
arXiv:2006.10824 · doi:10.1103/PhysRevB.102.155426
Abstract
Hall resistance is commonly suggested to be linear-in-magnetic-field , provided the field is small. We argue here that at low temperatures this linearity is broken due to weak localization/antilocalization phenomena in inhomogeneous systems, while in a uniform medium these effects do not affect the linear field dependence of . We calculate the Hall resistance for different two-component media using a mean-field approach and show that this non-linearity is experimentally observable.
arXiv comment7 pages, 3 figures
References in corpus (26)
- Observation of Electron-Hole Puddles in Graphene Using a Scanning Single Electron Transistor
- Weak localisation magnetoresistance and valley symmetry in graphene
- Strong suppression of weak (anti)localization in graphene
- Observation of Dirac Holes and Electrons in a Topological Insulator
- A Universal Critical Density Underlying the Physics of Electrons at the LaAlO3/SrTiO3 Interface
- Emergence of decoupled surface transport channels in bulk insulating Bi2Se3 thin films
- Magnetoresistance in two-component systems
- Interaction corrections at intermediate temperatures: dephasing time
- Hall-effect within the colossal magnetoresistive semi-metallic state of MoTe2
- Nonbackscattering Contribution to the Weak Localization
- Magnetoresistance and dephasing in a two-dimensional electron gas at intermediate conductances
- Spectroscopic evidence for strong correlations between local superconducting gap and local Altshuler-Aronov density-of-states suppression in ultrathin NbN films
- Diffusion and ballistic contributions of the interaction correction to the conductivity of a two-dimensional electron gas
- Electron-electron interaction correction and magnetoresistance in tilted fields in Si-based 2D systems
- The Hall Effect in Superconducting Films
- Giant suppression of the Drude conductivity due to quantum interference in disordered two-dimensional systems
- Evidence for spin memory in the electron phase coherence in graphene
- Intervalley scattering and weak localization in Si-based two-dimensional structures
- Novel Energy Scale in the Interacting 2D Electron System Evidenced from Transport and Thermodynamic Measurements
- Effect of intersubband scattering on weak localization in 2D systems
- Quantum Interference Controls the Electron Spin Dynamics in n-GaAs
- Low magnetic field anomaly of the Hall effect in disordered 2D systems: Interplay between weak localization and electron-electron interaction
- Weak localization in macroscopically inhomogeneous two-dimensional systems: a simulation approach
- Sharp Magnetic Field Dependence of the 2D Hall Coefficient Induced by Classical Memory Effects
- Temperature dependent nonlinear Hall effect in macroscopic Si-MOS antidot array
- Weak localization effect on thermomagnetic phenomena