Sharp Magnetic Field Dependence of the 2D Hall Coefficient Induced by Classical Memory Effects
arXiv:0708.3165 · doi:10.1103/PhysRevB.77.193308
Abstract
We show that a sharp dependence of the Hall coefficient on the magnetic field arises in two-dimensional electron systems with randomly located strong scatterers. The phenomenon is due to classical memory effects. We calculate analytically the dependence for the case of scattering by hard disks of radius , randomly distributed with concentration . We demonstrate that in very weak magnetic fields () memory effects lead to a considerable renormalization of the Boltzmann value of the Hall coefficient: With increasing magnetic field, the relative correction to decreases, then changes sign, and saturates at the value We also discuss the effect of the smooth disorder on the dependence of on .
References in corpus (15)
- Quasiclassical negative magnetoresistance of a 2D electron gas: interplay of strong scatterers and smooth disorder
- Interaction-induced magnetoresistance in a two-dimensional electron gas
- Strong magnetoresistance induced by long-range disorder
- Quasiclassical magnetotransport in a random array of antidots
- Suppression of chaotic dynamics and localization of two-dimensional electrons by a weak magnetic field
- Interaction corrections to the Hall coefficient at intermediate temperatures
- Classical mechanism for negative magnetoresistance in two dimensions
- Anomalous Low-Field Classical Magnetoresistance in Two Dimensions
- Magneto-Transport in the Two-Dimensional Lorentz Gas
- Hall resistance in the hopping regime, a "Hall Insulator"?
- Anomalous Negative Magnetoresistance Caused by Non-Markovian Effects
- Non-Markovian Effects on the Two-Dimensional Magnetotransport: Low-field Anomaly in Magnetoresistance
- Cyclotron resonance in antidot arrays
- Cyclotron resonance in a two-dimensional electron gas with long-range randomness
- Classical memory effects on spin dynamics in two-dimensional systems
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- Magnetic field influenced electron-impurity scattering and magnetotransport
- Quantum phase coherence in non-Markovian and reaction-diffusive transport