Pressure-induced topological phase transition in polar semiconductor BiTeBr

Abstract

We performed X-ray diffraction and electrical resistivity measurement up to pressures of 5 GPa and the first-principles calculations utilizing experimental structural parameters to investigate the pressure-induced topological phase transition in BiTeBr having a noncentrosymmetric layered structure (space group P3m1). The P3m1 structure remains stable up to pressures of 5 GPa; the ratio of lattice constants, c/a, has a minimum at pressures of 2.5 - 3 GPa. In the same range, the temperature dependence of resistivity changes from metallic to semiconducting at 3 GPa and has a plateau region between 50 and 150 K in the semiconducting state. Meanwhile, the pressure variation of band structure shows that the bulk band-gap energy closes at 2.9 GPa and re-opens at higher pressures. Furthermore, according to the Wilson loop analysis, the topological nature of electronic states in noncentrosymmetric BiTeBr at 0 and 5 GPa are explicitly revealed to be trivial and non-trivial, respectively. These results strongly suggest that pressure-induced topological phase transition in BiTeBr occurs at the pressures of 2.9 GPa.

arXiv comment15 pages, 4 figures

References in corpus (16)

• Relativistic separable dual-space Gaussian Pseudopotentials from H to Rn
• Topological Insulators with Inversion Symmetry
• Time Reversal Polarization and a Z_2 Adiabatic Spin Pump
• Computing topological invariants without inversion symmetry
• Observation of Dirac Holes and Electrons in a Topological Insulator
• Emergence of non-centrosymmetric topological insulating phase in BiTeI under pressure
• Origin of giant bulk Rashba splitting: Application to BiTeI
• Wannier Center Sheets in Topological Insulators
• Strongly spin-orbit coupled two-dimensional electron gas emerging near the surface of polar semiconductors
• Signatures of a Pressure-Induced Topological Quantum Phase Transition in BiTeI
• Infrared and Raman spectroscopy measurements of a transition in the crystal structure and a closing of the energy gap of BiTeI under pressure
• Rashba split surface states in BiTeBr
• Optical properties of BiTeBr and BiTeCl
• Termination-dependent surface properties in the giant-Rashba semiconductors BiTeX (X = Cl, Br, I)
• Imaging ambipolar two-dimensional carriers induced by the spontaneous electric polarization of a polar semiconductor BiTeI
• Crystal growth and electronic properties of a 3D Rashba material, BiTeI, with adjusted carrier concentrations

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