Crystal growth and electronic properties of a 3D Rashba material, BiTeI, with adjusted carrier concentrations

Abstract

3D Rashba materials can be a leading player in spin-related novel phenomena, ranging from the metallic extreme (unconventional superconductivity) to the transport intermediate (spin Hall effects) to the novel insulating variant (3D topological insulating states). As the essential backbone for both fundamental and applied research of such a 3D Rashba material, this study established the growth of sizeable single crystals of a candidate compound BiTeI with adjusted carrier concentrations. Three techniques (standard vertical Bridgman, modified horizontal Bridgman, and vapour transport) were employed, and BiTeI crystals (> 1 * 1 * 0.2 mm3) with fundamentally different electronic states from metallic to insulating were successfully grown by the chosen techniques. The 3D Rashba electronic states, including the Fermi surface topology, for the corresponding carrier concentrations of the obtained BiTeI crystals were revealed by relativistic first-principles calculations.

10 pages, 5 Figures

References in corpus (2)

• Dissipationless Quantum Spin Current at Room Temperature
• Momentum-Resolved Landau-Level Spectroscopy of Dirac Surface State in Bi2Se3

Cited by in corpus (7)

• Electrically Controlled Spin Injection from Giant Rashba Spin-Orbit Conductor BiTeBr
• Pressure-induced topological phase transition in polar semiconductor BiTeBr
• Crystal and electronic structure of BiTeI, AuTeI, and PdTeI compounds: A dispersion-corrected density-functional study
• Imaging ambipolar two-dimensional carriers induced by the spontaneous electric polarization of a polar semiconductor BiTeI
• Interlayer RKKY Coupling in Bulk Rashba Semiconductors under Topological Phase Transition
• Chiral Electronic Excitations in a Quasi-2D Rashba System BiTeI
• Spin-Mediated Direct Photon Scattering by Plasmons in BiTeI