Capacitance-voltage measurements of (Bi${}_{1-x}$Sb${}_x$)${}_2$Te${}_3$ field effect device

Abstract

Capacitance-voltage ($\text{C-V}$) traces in n-type-(Bi${}_{1-x}$Sb${}_x$)${}_2$Te${}_3$/oxide/metal capacitor structures using an AC capacitance bridge are investigated. By tuning the top gate voltage from positive to negative values, the system at the interface is tuned from accumulation, via depletion into inversion. Our results show the typical low-frequency and high frequency $\text{C-V}$ traces, depending on measuring frequency, temperature and illumination intensity and reflecting their sensitive dependence on recombination/generation rates. Superimposed a strong hysteresis under inversion is also observed which is ascribed to the presence of conventional localized surface states which coexist with topological surface states.

arXiv comment18 pages, 5 figures

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• Topological Insulators
• Quantum Spin Hall Insulator State in HgTe Quantum Wells
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• Topological Insulator Materials
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Cited by in corpus (1)

• 2D-Dirac surface states and bulk gap probed via quantum capacitance in a 3D topological insulator