Thermoelectric transport in a three-dimensional HgTe topological insulator

Abstract

The thermoelectric response of 80-nm-thick strained HgTe films of a three-dimensional topological insulator (3D TI) has been studied experimentally. An ambipolar thermopower is observed where the Fermi energy moves from conducting to the valence bulk band. The comparison between theory and experiment shows that the thermopower is mostly due to the phonon drag contribution. In the region where the 2D Dirac electrons coexist with bulk hole states, the Seebeck coefficient is modified due to 2D electron - 3D hole scattering.

arXiv comment6 pages, 3 figures

References in corpus (16)

• Topological Insulators
• Topological insulators and superconductors
• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• The quantum spin Hall effect and topological insulators
• Three-Dimensional Topological Insulators
• Quantum Hall Effect from the Topological Surface States of Strained Bulk HgTe
• Enhanced Thermoelectric Performance and Anomalous Seebeck Effects in Topological Insulators
• Transport properties of a 3D topological insulator based on a strained high mobility HgTe film
• Probing quantum capacitance in a 3D topological insulator
• Mesoscopic transport in two-dimensional topological insulators
• Topological insulators based on HgTe
• Quantum Hall effect and Landau levels in the 3D topological insulator HgTe
• The effect of electron--hole scattering on the transport properties of a 2D semimetal in a HgTe quantum well
• Electron-hole scattering limited transport of Dirac fermions in a topological insulator
• Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well
• Thermopower of a Two-Dimensional Semimetal in a HgTe Quantum Well