Terahertz properties of Dirac fermions in HgTe films with optical doping
arXiv:1603.05926 · doi:10.1088/2053-1583/aa5cd7
Abstract
Terahertz properties of mercury telluride (HgTe) films with critical thickness are presented and discussed. The density of the charge carriers is controlled using contact-free optical doping by visible light. In the magneto-optical response of HgTe the contribution of two types of carriers (electrons and holes) can be identified. The density of the electrons can be modified by light illumination by more than one order of magnitude. As the hole density is roughly illuminationindependent, the terahertz response of the illuminated samples becomes purely electronic. In some cases, light illumination may switch the qualitative electrodynamic response from hole-like to the electron-like. The cyclotron mass of the electrons could be extracted from the data and shows a square root dependence upon the charge concentration in the broad range of parameters. This can be interpreted as a clear proof of a linear dispersion relations, i.e. Dirac-type charge carriers.
To be published in "2D Materials"
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Cited by in corpus (6)
- Band Structure of Two-dimensional Dirac Semimetal from Cyclotron Resonance
- High-frequency breakdown of the integer QHE in GaAs/AlGaAs heterojunctions
- Energy spectrum of semimetallic HgTe quantum wells
- Superradiant and transport lifetimes of the cyclotron resonance in the topological insulator HgTe
- Universal transparency and fine band structure near the Dirac point in HgTe quantum wells
- All-optical band structure reconstruction and onset of Landau quantization of Dirac fermions