Photoinduced valley-polarized current of layered MoS2 by electric tuning
arXiv:1701.01520 · doi:10.1088/0957-4484/27/18/185202
Abstract
A photoinduced current of a layered MoS2-based transistor is studied from first-principles. Under the illumination of circular polarized light, a valley-polarized current is generated, which can be tuned by the gate voltage. For monolayer MoS2, the valley-polarized spin-up (down) electron current at K (K') points is induced by the right (left) circular polarized light. The valley polarization is found to reach +1.0 (-1.0) for the valley current that carried such a K (K') index. For bilayer MoS2, the spin-up (down) current can be induced at both K and K' valleys by the right (left) circular light. In contrast to monolayer MoS2, the photoinduced valley polarization shows asymmetric behavior upon reversal of the gate voltage. Our results show that the valley polarization of the photoinduced current can be modulated by the circular polarized light and the gate voltage. All the results can be well understood using a simple kp model.
References in corpus (20)
- Atomically thin MoS2: A new direct-gap semiconductor
- Two Dimensional Atomic Crystals
- Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides
- Valley polarization in MoS2 monolayers by optical pumping
- Single-Layer MoS2 Phototransistors
- Valley contrasting physics in graphene: magnetic moment and topological transport
- Valley filter and valley valve in graphene
- Valley Dependent Optoelectronics from Inversion Symmetry Breaking
- Intrinsic and Rashba Spin-orbit Interactions in Graphene Sheets
- Electroluminescence in Single Layer MoS2
- Spin-orbit gap of graphene: First-principles calculations
- Low-temperature photocarrier dynamics in monolayer MoS2
- Electrical Tuning of Valley Magnetic Moment via Symmetry Control
- Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions
- Spontaneous Quantum Hall States in Chirally-stacked Few-Layer Graphene Systems
- Magnetoelectric effects and valley controlled spin quantum gates in transition metal dichalcogenide bilayers
- Spin-Layer Locking Effects in Optical Orientation of Exciton Spin in Bilayer WSe2
- Electronic properties of graphene: a perspective from scanning tunneling microscopy and magneto-transport
- Elucidating the photoresponse of ultrathin MoS2 field-effect transistors by scanning photocurrent microscopy
- First-principles Analysis of Photo-current in Graphene PN Junctions
Cited by in corpus (4)
- Valley pseudospin in monolayer MoSi2N4 and MoSi2As4
- Thermal engineering in low-dimensional quantum devices: a tutorial review of nonequilibrium Green's function methods
- Quantum dot behavior in transition metal dichalcogenides nanostructures
- Realization of valley-spin polarized current via parametric pump in monolayer