First-principles Analysis of Photo-current in Graphene PN Junctions

Abstract

We report a first principles investigation of photocurrent generation by graphene PN junctions. The junctions are formed by either chemically doping with nitrogen and boron atoms, or by controlling gate voltages. Non-equilibrium Green's function (NEGF) formalism combined with density functional theory (DFT) is applied to calculate the photo-response function. The graphene PN junctions show a broad band photo-response including the terahertz range. The dependence of the response on the angle between the light polarization vector and the PN interface is determined. Its variation against photon energy $E_{ph}$ is calculated in the visible range. The essential properties of chemically doped and gate-controlled PN junctions are similar, but the former shows fingerprints of dopant distribution.

7 pages, 6 figures

References in corpus (12)

• Graphene Photonics and Optoelectronics
• Graphene photodetectors for high-speed optical communications
• Graphene-Based Liquid Crystal Device
• Universal dynamical conductance in graphite
• Weak localisation magnetoresistance and valley symmetry in graphene
• Excitonic Effects on the Optical Response of Graphene and Bilayer Graphene
• Ultrafast Photoluminescence from Graphene
• Electronic properties of mesoscopic graphene structures: charge confinement and control of spin and charge transport
• Intrinsic response time of graphene photodetectors
• Effect of radiation on transport in graphene
• Photocurrents in nanotube junctions
• Photocurrent in a visible-light graphene photodiode

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