Photocurrent in a visible-light graphene photodiode

Abstract

We calculate the photocurrent in a clean graphene sample normally irradiated by a monochromatic electromagnetic field and subject to a step-like electrostatic potential. We consider the photon energies $\hslash \Omega$ that significantly exceed the height of the potential barrier, as is the case in the recent experiments with graphene-based photodetectors. The photocurrent comes from the resonant absorption of photons by electrons and decreases with increasing ratio $\hslash \Omega /U_0$. It is weakly affected by the background gate voltage and depends on the light polarization as $\propto {\sin }^2\gamma$, $\gamma$ being the angle between the potential and the polarization plane.

5 pages, 3 figures

References in corpus (9)

• Graphene Photonics and Optoelectronics
• Graphene photodetectors for high-speed optical communications
• Photovoltaic Hall effect in graphene
• Photo-Thermoelectric Effect at a Graphene Interface Junction
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Cited by in corpus (6)

• High frequency electric field induced nonlinear effects in graphene (review)
• Photo-thermoelectric and photoelectric contributions to light detection in metal-graphene-metal photodetectors
• First-principles Analysis of Photo-current in Graphene PN Junctions
• Anisotropic photoconductivity in graphene
• Relativistic graphene ratchet on semidisk Galton board
• Radiation-induced quantum Fano-type resonances in the transport of $N$-$P$-$N$ graphene based junctions