Relativistic graphene ratchet on semidisk Galton board
arXiv:1010.4441 · doi:10.1140/epjb/e2010-10893-1
Abstract
Using extensive Monte Carlo simulations we study numerically and analytically a photogalvanic effect, or ratchet, of directed electron transport induced by a microwave radiation on a semidisk Galton board of antidots in graphene. A comparison between usual two-dimensional electron gas (2DEG) and electrons in graphene shows that ratchet currents are comparable at very low temperatures. However, a large mean free path in graphene should allow to have a strong ratchet transport at room temperatures. Also in graphene the ratchet transport emerges even for unpolarized radiation. These properties open promising possibilities for room temperature graphene based sensitive photogalvanic detectors of microwave and terahertz radiation.
4 pages, 4 figures. Research done at Quantware http://www.quantware.ups-tlse.fr/. More detailed analysis is given
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Cited by in corpus (8)
- Giant ratchet magneto-photocurrent in graphene lateral superlattices
- Beatings of ratchet current magneto-oscillations in GaN-based grating gate structures: manifestation of spin-orbit band splitting
- Ratchet effect in graphene with trigonal clusters
- Nonlinear intensity dependence of ratchet currents induced by terahertz laser radiation in bilayer graphene with asymmetric periodic grating gates
- Terahertz ratchet in graphene 2D metamaterial formed by a patterned gate with an antidot arrayd
- Quantum transport in a driven disordered potential: onset of directed current and noise-induced current reversal
- Symmetry breaking for ratchet transport in presence of interactions and magnetic field
- Skew scattering and ratchet effect in photonic graphene