Photogalvanic current in artificial asymmetric nanostructures
arXiv:cond-mat/0701128 · doi:10.1140/epjb/e2007-00127-2
Abstract
We develop a theoretic description of the photogalvanic current induced by a high frequency radiation in asymmetric nanostructures and show that it describes well the results of numerical simulations. Our studies allow to understand the origin of the electronic ratchet transport in such systems and show that they can be used for creation of new types of detectors operating at room temperature in a terahertz radiation range.
11 pages, 9 figs, EPJ latex style
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Cited by in corpus (16)
- Tunable transport with broken space-time symmetries
- Classical ratchet effects in heterostructures with a lateral periodic potential
- Ratchet effects induced by terahertz radiation in heterostructures with a lateral periodic potential
- Experimental investigation of the ratchet effect in a two-dimensional electron system with broken spatial inversion symmetry
- Ratchet effects in two-dimensional systems with a lateral periodic potential
- Ratchet transport of interacting particles
- Magnetic quantum ratchet effect in (Cd,Mn)Te- and CdTe-based quantum well structures with a lateral asymmetric superlattice
- Circular and linear magnetic quantum ratchet effects in dual-grating-gate CdTe-based nanostructures
- Relativistic graphene ratchet on semidisk Galton board
- Ratchet effect in graphene with trigonal clusters
- Wigner crystal diode
- Magnetic quantum ratchet effect in Si-MOSFETs
- Photovoltage in curved 1D systems
- Terahertz spin ratchet effect in magnetic metamaterials
- Symmetry breaking for ratchet transport in presence of interactions and magnetic field
- Skew scattering and ratchet effect in photonic graphene