High-efficiency photoelectric detector based on a p-n homojunction of monolayer black phosphorus
arXiv:2308.06661 · doi:10.1103/PhysRevApplied.20.024027
Abstract
We numerically investigate the high-efficiency photovoltaic effect in lateral p-n homojunction based on monolayer black phosphorus (MBP) by using the non-equilibrium Green's function combined with the density functional theory. Due to the built-in electric field of the p-n junction and the wrinkle structure of MBP, the photocurrent excited by either linearly or elliptically polarized light is significantly enhanced in a wide photon energy range. Moreover, because of the electron-photon interaction, the photocurrent is related to atomic orbitals through the polarizing angle of polarized light. Therefore, we can read the orbital information of the band structure from the polarizing angular distribution of photocurrent. These findings suggest the promising application of MBP-based p-n homojunction in high-efficiency photoelectric devices and orbital-resolved photovoltaic detection.
References in corpus (19)
- The SIESTA method for ab initio order-N materials simulation
- Efficient index handling of multidimensional periodic boundary conditions
- Black phosphorus field-effect transistors
- High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus
- Rediscovering Black Phosphorus: A Unique Anisotropic 2D Material for Optoelectronics and Electronics
- Tunable Band Gap and Anisotropic Optical Response in Few-layer Black Phosphorus
- Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors
- Broadband Linear-Dichroic Photodetector in a Black Phosphorus Vertical p-n Junction
- ab initio modeling of open systems: charge transfer, electron conduction, and molecular switching of a C_{60} device
- Photovoltaic effect in few-layer black phosphorus PN junctions defined by local electrostatic gating
- Quasiparticle band structure and tight-binding model for single- and bilayer black phosphorus
- Phase coexistence and metal-insulator transition in few-layer phosphorene: A computational study
- Edge effects on the electronic properties of phosphorene nanoribbons
- First-principles Analysis of Photo-current in Graphene PN Junctions
- Electrical contacts to monolayer black Phosphorus: a first principles investigation
- Native point defects in few-layer phosphorene
- Two-Dimensional Photogalvanic Spin-Battery
- Circular photogalvanic effect induced by monopolar spin orientation in p-GaAs/AlGaAs MQW
- Photocurrents in nanotube junctions