activity
20142022
most citedDoes P-type Ohmic Contact Exist in WSe2-metal Interfaces?

211 citations · 659 across the 12 of their papers we have counts for

collaborators

12 papers

cond-mat.mtrl-sci2022

Strong structural and electronic coupling in metavalent PbS moire superlattices

Yu Wang, Zhigang Song, Jiawei Wan +7

Moire superlattices are twisted bilayer materials, in which the tunable interlayer quantum confinement offers access to new physics and novel device functionalities. Previously, mo…

cond-mat.mes-hall2022★ 165 cited

The bulk van der Waals layered magnet CrSBr is a quasi-1D material

Julian Klein, Benjamin Pingault, Matthias Florian +21

Correlated quantum phenomena in one-dimensional (1D) systems that exhibit competing electronic and magnetic order are of strong interest for studying fundamental interactions and e…

cond-mat.mtrl-sci2021

Eshelby-twisted 3D moire superlattices

Zhigang Song, Xiaotian Sun, Lin-Wang Wang

Twisted bilayers of van der Waals materials have recently attracted great attention due to their tunable strongly correlated phenomena. Here, we investigate the chirality-specific…

cond-mat.mtrl-sci2020★ 124 cited

Valley pseudospin in monolayer MoSi2N4 and MoSi2As4

Chen Yang, Zhigang Song, Xiaotian Sun +1

For a long time, two-dimensional (2D) hexagonal MoS2 was proposed as a promising material for valleytronic system. However, the limited size of growth and low carrier motilities in…

cond-mat.mtrl-sci2018★ 1 cited

Discovery of Two-Dimensional Multiferroicity in van der Waals CuCrP2S6 Layers

Youfang Lai, Zhigang Song, Yi Wan +6

Multiferroic materials are potential to be applied in novel magnetoelectric devices, for example, high-density non-volatile storage. Last decades, research on multiferroic material…

cond-mat.mtrl-sci2018★ 1 cited

Spontaneous Valley Splitting and Valley Pseudospin Field Effect Transistor of Monolayer VAgP2Se6

Zhigang Song, Xiaotian Sun, Jingshan Qi +6

Valleytronics is a rising topic to explore the emergent degree of freedom for charge carriers in energy band edges and has attracted a great interest due to many intriguing quantum…

cond-mat.mtrl-sci2015★ 211 cited

Does P-type Ohmic Contact Exist in WSe2-metal Interfaces?

Yangyang Wang, Ruoxi Yang, Ruge Quhe +9

Formation of low-resistance metal contacts is the biggest challenge that masks the intrinsic exceptional electronic properties of 2D WSe2 devices. We present the first comparative…

cond-mat.mes-hall2015★ 3 cited

Monolayer Phosphorene-Metal Interfaces

Yuanyuan Pan, Yangyang Wang, Meng Ye +9

Recently, phosphorene electronic and optoelectronic prototype devices have been fabricated with various metal electrodes. We systematically explore for the first time the contact p…

cond-mat.mes-hall2015★ 14 cited

Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations

Hongxia Zhong, Zeyuan Ni, Yangyang Wang +8

Although many prototype devices based on two-dimensional (2D) MoS2 have been fabricated and wafer scale growth of 2D MoS2 has been realized, the fundamental nature of 2D MoS2-metal…

cond-mat.mes-hall2014

Tunable Valley Polarization and Valley Orbital Magnetic Moment Hall Effect in Honeycomb Systems with Broken Inversion Symmetry

Zhigang Song, Ruge Quhe, Yan Li +3

In this Letter, a tunable valley polarization is investigated for honeycomb systems with broken inversion symmetry such as transition-metal dichalcogenide MX2 (M = Mo, W; X = S, Se…

cond-mat.mtrl-sci2014★ 136 cited

Low-Energy Effective Hamiltonian for Giant-Gap Quantum Spin Hall Insulators in Honeycomb X-Hydride/Halide (X=N-Bi) Monolayers

Cheng-Cheng Liu, Shan Guan, Zhigang Song +3

Using the tight-binding method in combination with first-principles calculations, we systematically derive a low-energy effective Hilbert subspace and Hamiltonian with spin-orbit c…

cond-mat.mtrl-sci2014★ 4 cited

Quantum spin Hall insulators and quantum valley Hall insulators of BiX/SbX (X = H, F, Cl, and Br) monolayers with a record bulk band gap

Zhigang Song, Cheng-Cheng Liu, Jinbo Yang +7

Large bulk band gap is critical for application of the quantum spin Hall (QSH) insulator or two dimensional (2D) topological insulator (TI) in spintronic device operating at room t…