124 citations · 129 across the 5 of their papers we have counts for
5 papers
Pressure-Driven Metallicity in Ångström-Thickness 2D Bismuth and Layer-Selective Ohmic Contact to MoS2
Shuhua Wang, Shibo Fang, Qiang Li +8
Recent fabrication of two-dimensional (2D) metallic bismuth (Bi) via van der Waals (vdW) squeezing method opens a new avenue to ultrascaling metallic materials into the ångström-th…
Bilayer TeO2: The First Oxide Semiconductor with Symmetric Sub-5-nm NMOS and PMOS
Linqiang Xu, Liya Zhao, Chit Siong Lau +7
Wide bandgap oxide semiconductors are very promising channel candidates for next-generation electronics due to their large-area manufacturing, high-quality dielectrics, low contact…
Quantum Transport Simulation of Sub-1-nm Gate Length Monolayer MoS2 Transistors
Ying Li, Yang Shen, Linqiang Xu +7
Sub-1-nm gate length transistors have been experimentally fabricated, but their device performance limit remains elusive. Herein, we explore the performance limits of the s…
Valley pseudospin in monolayer MoSi2N4 and MoSi2As4
Chen Yang, Zhigang Song, Xiaotian Sun +1
For a long time, two-dimensional (2D) hexagonal MoS2 was proposed as a promising material for valleytronic system. However, the limited size of growth and low carrier motilities in…
Spontaneous Valley Splitting and Valley Pseudospin Field Effect Transistor of Monolayer VAgP2Se6
Zhigang Song, Xiaotian Sun, Jingshan Qi +6
Valleytronics is a rising topic to explore the emergent degree of freedom for charge carriers in energy band edges and has attracted a great interest due to many intriguing quantum…