211 citations · 1.2k across the 23 of their papers we have counts for
23 papers
Sub-5 nm Gate-All-Around InP Nanowire Transistors Towards High-Performance Devices
Linqiang Xu, Lianqiang Xu, Qiuhui Li +7
Gate-all-around (GAA) nanowire (NW) field-effect transistor (FET) is a promising device architecture due to its superior gate controllability than that of the conventional FinFET a…
Sliding Ferroelectric Tunnel Junctions
Jie Yang, Jun Zhou, Jing Lu +3
Very recently, ferroelectric polarization in staggered bilayer hexagonal boron nitride (BBN) and its novel sliding inversion mechanism was reported experimentally (Science 2021, 37…
Valley pseudospin in monolayer MoSi2N4 and MoSi2As4
Chen Yang, Zhigang Song, Xiaotian Sun +1
For a long time, two-dimensional (2D) hexagonal MoS2 was proposed as a promising material for valleytronic system. However, the limited size of growth and low carrier motilities in…
Spontaneous Valley Splitting and Valley Pseudospin Field Effect Transistor of Monolayer VAgP2Se6
Zhigang Song, Xiaotian Sun, Jingshan Qi +6
Valleytronics is a rising topic to explore the emergent degree of freedom for charge carriers in energy band edges and has attracted a great interest due to many intriguing quantum…
Non-Superconducting Non-Abelian Statistics in One-Dimensional Topological Insulators
Zhigang Song
Topological materials are of great interest for applications in quantum computing, providing intrinsic robustness against environmental noises. A popular direction is to look for M…
Does P-type Ohmic Contact Exist in WSe2-metal Interfaces?
Yangyang Wang, Ruoxi Yang, Ruge Quhe +9
Formation of low-resistance metal contacts is the biggest challenge that masks the intrinsic exceptional electronic properties of 2D WSe2 devices. We present the first comparative…