211 citations · 1.2k across the 23 of their papers we have counts for
5 papers · 1 filter
Graphdiyne-metal contacts and graphdiyne transistors
Yuanyuan Pan, Yangyang Wang, Lu Wang +9
Graphdiyne is prepared on metal surface, and making devices out of it also inevitably involves contact with metals. Using density functional theory with dispersion correction, we s…
All-Metallic Vertical Transistors Based on Stacked Dirac Materials
Yangyang Wang, Zeyuan Ni, Qihang Liu +7
It is a persisting pursuit to use metal as a channel material in a field effect transistor. All metallic transistor can be fabricated from pristine semimetallic Dirac materials (su…
Tunable Valley Polarization and Valley Orbital Magnetic Moment Hall Effect in Honeycomb Systems with Broken Inversion Symmetry
Zhigang Song, Ruge Quhe, Yan Li +3
In this Letter, a tunable valley polarization is investigated for honeycomb systems with broken inversion symmetry such as transition-metal dichalcogenide MX2 (M = Mo, W; X = S, Se…
Does the Dirac Cone Exist in Silicene on Metal Substrates?
Ruge Quhe, Yakun Yuan, Jiaxin Zheng +6
Absence of the Dirac cone due to a strong band hybridization is revealed to be a common feature for epitaxial silicene on metal substrates according to our first-principles calcula…
Quantum spin Hall insulators and quantum valley Hall insulators of BiX/SbX (X = H, F, Cl, and Br) monolayers with a record bulk band gap
Zhigang Song, Cheng-Cheng Liu, Jinbo Yang +7
Large bulk band gap is critical for application of the quantum spin Hall (QSH) insulator or two dimensional (2D) topological insulator (TI) in spintronic device operating at room t…