activity
20162022
most citedField-Effect Transistor Based on MoSiN and WSiN Monolayers Under Biaxial Strain: A Computational Study of the Electronic Properties

33 citations · 134 across the 13 of their papers we have counts for

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Showing 2020Show all

6 papers · 1 filter

cond-mat.mes-hall2020★ 9 cited

The Effects of vertical electric field and charged impurities on the spin-polarized transport of -antimonene armchair nanoribbons

Shoeib Babaee Touski, M. Pilar López-Sancho

The electronic properties of antimonene, single-layer Sb, are attracting great attention. In this paper, spin transport in armchair antimonene nanoribbon (ASbNR) is investigated. F…

cond-mat.mtrl-sci2020★ 17 cited

The Electrical and Spin Properties of Monolayer and Bilayer Janus HfSSe under Vertical Electrical Field

Nayereh Ghobadi, Shoeib Babaee Touski

In this paper, the electrical and spin properties of mono- and bilayer HfSSe in the presence of a vertical electric field are studied. The density functional theory is used to inve…

cond-mat.mes-hall2020

Ultra-Thin SiGe in the Source Modifies Performance of Thin-Film Tunneling FET

Hamed Habibi, Shoeib Babaee Touski

In this work, the source structure of an n-type thin-film tunneling FET is engineered to get better performance. An ultra-thin SiGe along with Si is used in the source of silicon-b…

cond-mat.mes-hall2020

Spin-Orbit and Strain Induced Modification in Electrical Properties of Monolayer InSb

Shoeib Babaee Touski

In this work, the electrical properties of monolayer InSb in the presence of biaxial strain using density functional theory are investigated. Here, we first explore the band struct…

cond-mat.mtrl-sci2020

Interplay Between Stacking Order and In-plane Strain on the Electrical Properties of Bilayer Antimonene

Shoeib Babaee Touski, Nayereh Ghobadi

In this work, the electrical properties of bilayer Antimonene with different stacking orders are studied. Density functional theory with van der Waals (vdW) correction is used to i…

cond-mat.mtrl-sci2020★ 18 cited

Strain Engineering of Spin and Rashba properties in Group-III Monochalcogenide MX (M=Ga, In and X=S, Se, Te) Monolayer

Mohammad Ariapour, Shoeib Babaee Touski

In this paper, spin properties of monolayer MX (M=Ga, In and X=S, Se, Te) in the presence of strain are studied. Density functional theory is used to investigate spin properties. T…