Electrical and ELectronic Properties of Strained Mono-layer InTe

Abstract

In this paper, electrical and electronic properties of strained mono-layer InTe for two structures, $\alpha$, and $\beta$ phases, is investigated. The band structure is obtained using density functional theory (DFT). The minimum energy and effective mass of the conduction band and second conduction band for different strains are calculated. A FET with using InTe as the channel material is investigated. Voltage-current characteristics of InTe FET is calculated and I${}_{ON}$/I${}_{OFF}$ ratio is obtained with respect to biaxial strain.