Quantized Conductance and Field-Effect Topological Quantum Transistor in Silicene Nanoribbons

Abstract

Silicene (a monolayer of silicon atoms) is a quantum spin-Hall insulator, which undergoes a topological phase transition into other insulators by applying external field such as electric field, photo-irradiation and antiferromagnetic order. We investigate the electronic and transport properties of silicene nanoribbons based on the Landauer formalism. We propose to determine topological phase transitions by measuring the density of states and conductance. The conductance is quantized and changes its value when the system transforms into different phases. We show that a silicene nanoribbon near the zero energy acts as a field-effect transistor. This transistor is robust though it makes use of the minimum quantized conductance since the zero-energy edge states are topologically protected. Our findings open a new way to future topological quantum devices.

4 pages, 5 figures

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• Topological Kirchhoff Law and Bulk-Edge Correspondence for Valley-Chern and Spin-Valley-Chern Numbers
• Electronic and optical properties of graphene nanoribbons in external fields
• Interference of Topologically Protected Edge States in Silicene Nanoribbons
• Charge transport in pn and npn junctions of silicene
• van der Waals Heterostructures of Germanene, Stanene and Silicene with Hexagonal Boron Nitride and Their Topological Domain Walls
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• Symmetry Protected Topological Charge in Symmetry Broken Phase: Spin-Chern, Spin-Valley-Chern and Mirror-Chern Numbers
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• Engineering topological phases in triple HgTe/CdTe quantum wells
• Optimizing Topological Switching in Confined 2D-Xene Nanoribbons via Finite-Size Effects
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• Asymmetric versus symmetric $HgTe/C{\mathrm{d}}_{\mathrm{x}}\mathrm{H}{\mathrm{g}}_{1-\mathrm{x}}\mathrm{Te}$ double quantum wells: Band gap tuning without electric field
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• Scalable Machine Learning Models for Predicting Quantum Transport in Disordered 2D Hexagonal Materials